LAM 810-099175-012

Description

• • Voltage Rating: 1200 V
  • Current Rating: 100 A
  • Switching Frequency: Up to 20 kHz
  • Operating Temperature: -40 °C to +125 °C (junction)
• Functional Features:
  • High-efficiency Power Conversion: Low on-resistance IGBTs for minimal power loss.
  • Overcurrent/Overvoltage Protection: Integrated fault detection and protection circuits.
  • PWM Control: Supports pulse-width modulation for precise power regulation.
  • Thermal Monitoring: Built-in NTC thermistor for temperature sensing.
• Performance Parameters:
  • On-state Voltage Drop: ≤1.8 V
  • Turn-off Time: ≤500 ns
  • Isolation Voltage: 2500 Vrms
• Material Composition:
  • Substrate: Aluminum nitride (AlN) ceramic (high thermal conductivity)
  • Power Devices: Silicon IGBTs and FWDs
  • Encapsulation: Epoxy resin (thermally conductive)
  • Terminals: Copper alloy, tin-plated
• Structural Characteristics:
  • Form Factor: Standard power module package (130 mm × 60 mm × 25 mm)
  • Mounting: Baseplate for heat sink attachment
  • Terminals: Power terminals (AC/DC), gate control terminals
• Working Principle: Uses IGBTs as switching elements to convert AC power to regulated DC power (or invert DC to AC), controlling the voltage/current supplied to motors, heaters, or RF generators.
• Advantages:
  • High Power Density: Compact package for high-power applications.
  • High Efficiency: Reduces energy consumption and heat generation.
  • Robust Protection: Comprehensive fault protection for equipment safety.
• Applicable Industries: Semiconductor manufacturing (RF generators, heaters), industrial drives, power supplies, renewable energy.
• Model Series: 810 Series (Lam Research Power Control Module Series)
• Installation Requirements:
  • Mount on a properly sized heat sink (thermal resistance ≤0.2 °C/W).
  • Torque power terminals to 2.5 N·m.
• Usage Notes:
  • Do not exceed the maximum junction temperature (+125 °C).
  • Ensure proper insulation between power terminals and heat sink.