Product Short Description
Product Introduction:
The AMAT 1080-01772 is a precision-engineered gas distribution plate (showerhead) used in Applied Materials dielectric and polysilicon etch chambers. It distributes process gases uniformly across the wafer surface while withstanding high-temperature plasma exposure. The component is part of the upper electrode assembly in AMAT etch platforms.
Description
Technical Specifications:
- Part Number: 1080-01772
- Application: Applied Materials Etch Chambers (Centura, Producer, MxP series)
- Material: Anodized Aluminum 6061-T6 body, Yttrium Oxide (Y₂O₃) plasma-spray coating
- Passage Count: 96 gas holes
- Hole Diameter: 0.6 mm ± 0.025 mm
- Operating Temperature: Up to 200°C (392°F)
- Plasma Exposure: Continuous RF exposure at 13.56 MHz
- Dimensions: 300 mm diameter (wafer-matched)
- Thickness: 12 mm ± 0.5 mm
- Surface Finish: Ra 0.8 μm (32 μin)
- Cleaning Process: HF dip + DI water + N₂ dry
Functional Features:
- 96 precision-drilled gas orifices for uniform distribution
- Y₂O₃ coating provides erosion resistance against fluorine-based plasmas
- Internal gas plenum with baffle for flow equalization
- RF ground path through aluminum body
Performance Parameters:
- Gas Flow Uniformity: ≤ ±1.5% across 300 mm wafer
- Particle Generation: < 5 particles/wafer (≥0.2 μm)
- Etch Rate Uniformity Contribution: ≤ ±1%
- Coating Thickness: 150–200 μm Y₂O₃
Structural Features:
- Single-piece machined aluminum disc
- Internal spiral baffle channel
- O-ring seal groove (Viton, 2 mm cross-section)
- RF grounding tab (stainless steel)
Working Principle:
Process gas enters the internal plenum, passes through the spiral baffle for flow equalization, then exits through 96 precision orifices onto the wafer surface. The Y₂O₃ coating protects the aluminum from sputter erosion by the fluorine plasma, maintaining orifice geometry over thousands of wafer cycles.
Key Advantages:
- Y₂O₃ coating extends service life 3× versus uncoated aluminum
- 96-hole pattern optimized for 300 mm wafer uniformity
- Internal baffle eliminates center-to-edge flow variation
- Direct OEM replacement ensures chamber matching
Applicable Industries: Semiconductor manufacturing — Dielectric etch, polysilicon etch, contact etch
Installation Requirements:
- Install in ISO Class 1 or better cleanroom
- Align using 3 dowel pins to chamber body
- Torque 6 fasteners to 5 N·m ± 0.5 N·m in star pattern
- Perform helium leak test: < 1 × 10⁻⁸ Torr·L/s
Usage Notes:
- Replace when particle count exceeds 10/wafer
- Do not use metal tools on Y₂O₃ surface
- Clean with approved AMAT-specified recipe only
- Typical lifetime: 10,000–15,000 wafers
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