Description
Technical Specifications
- Frequency Outputs: 13.56 MHz (high frequency), 60 MHz (very high frequency)
- Power Outputs: 0–8 kW (13.56 MHz), 0–5 kW (60 MHz)
- Stability: ±0.5% full scale (power)
- Harmonic Distortion: ≤-40 dBc
- Impedance: 50 Ω (nominal)
- Input Voltage: 3-phase 480 V AC ±10%, 50/60 Hz
- Operating Temperature: 10 °C ~ +40 °C
- Protection Class: IP20
- Dimensions (L×W×H): 550 mm × 480 mm × 220 mm
- Weight: 35 kg
Structural Features
Rack-mountable enclosure, dual independent RF power stages, built-in digital matching network, DSP-based control system, front panel with touchscreen display, redundant cooling fans.
Functional Characteristics
Dual-frequency RF power delivery for PECVD processes; enables precise control of plasma density and ion energy for ultra-low-k dielectric film deposition; supports independent power adjustment for each frequency.
Working Principle
Converts 3-phase AC input to DC via a rectifier; two independent inverter stages generate 13.56 MHz and 60 MHz RF signals; the built-in matching network ensures optimal power transfer to the plasma load.
Material Composition
- Enclosure: Stainless steel with anti-corrosion coating
- Power Modules: High-efficiency IGBTs and MOSFETs
- Heat Sinks: High-purity aluminum alloy
- Control Board: FR-4 PCB with gold-plated contacts
Advantages & Highlights
Dual-frequency operation for advanced PECVD processes, precise plasma control, high power stability, low harmonic distortion, compatibility with AMAT Producer GT platforms, reliable 24/7 operation.
Applicable Industries
Semiconductor wafer manufacturing (5nm/3nm logic chips, 3D NAND), ultra-low-k dielectric deposition, advanced memory devices, high-density interconnects.
Installation Requirements
- Install in a standard 19-inch rack near the process chamber.
- Use low-loss 50 Ω coaxial cables for RF connections.
- Reserve 200 mm clearance above/below for cooling airflow.
- Ensure reliable grounding to minimize RF interference.
Usage Notes
- Operate only with a properly matched RF load.
- Allow a 30-minute warm-up period before high-power operation.
- Keep the internal components clean to prevent arcing.
- Do not open the enclosure while powered on.
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