Description
Technical Specifications
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Device Type: Asymmetric IGCT with integrated gate driver
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Blocking Voltage: 4 500 V
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Average On-State Current (ITAV): 1 200 A @ 85 °C
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Surge Current (ITSM): 16 kA (10 ms, 50 Hz)
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Turn-Off Losses (Eoff): < 0.9 J per pulse
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Conduction Voltage Drop (VT): 1.35 V typ @ 1 200 A, 125 °C
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Gate Unit Supply: 20 VDC ±5 %, isolated, 10 W max
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dv/dt Capability: 3 kV/µs snubberless turn-off
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Operating Temperature: –40 °C…+125 °C (chip)
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Mechanical Package: 140 mm × 130 mm × 26 mm (LinPak), 1.4 kg
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Cooling: Direct liquid or forced-air, thermal resistance 0.08 K/W
Functional Features
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Micro-second switching enables 500 Hz carrier operation without snubber circuits
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Low on-state losses increase inverter efficiency to > 99 % at rated load
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Integrated gate driver with status feedback and fault latch simplifies control wiring
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LinPak parallel technology allows easy stacking to multi-kA ratings
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Built-in temperature sensor and over-current detection for predictive maintenance
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Standardised gate interface supports Profibus DP, EtherCAT and CANopen drive links
Application Scenarios
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Heavy-duty traction: locomotive inverters, metro drives, mining haul trucks
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Renewable energy: wind-turbine full-power converters, solar central inverters > 1 MW
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Power systems: STATCOM, SVG, HVDC rectifier/inverter valves
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Industrial drives: rolling-mill main drives, pump and fan VFDs up to 5 MW
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Grid stabilization: active front-end (AFE) rectifiers for regenerative braking in cranes and elevators
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