ABB 5SHX2645L0004 – Integrated Gate Commutated Thyristor (IGCT) Module

Description

1. Electrical Ratings
   • DC charging voltage: 4.4 kV
   • Peak repetitive voltage: 9.0 kV
   • Rated turn-off current: 1,850 A
   • Max pulse repetition frequency: 2 Hz
   • On-state voltage drop: < 2.1 V at 1,000 A, 125 °C
   • Gate drive: fully integrated, 24 V DC supply, optically isolated
2. Mechanical & Thermal
   • Dimensions: 240 mm × 180 mm × 60 mm
   • Weight: 2.6 kg
   • Cooling: forced air or liquid cold-plate ready
   • Operating temperature: –40 °C to +70 °C
   • Storage temperature: –55 °C to +125 °C
   • Isolation: 2.5 kV RMS module-to-heatsink
3. Key Features
   • Combines low conduction loss of thyristors with fast IGBT-like switching (< 1 µs)
   • Integrated gate unit simplifies wiring and reduces component count
   • TMR-ready architecture supports triple-modular-redundant safety systems
   • Hot-swappable design allows online replacement without system shutdown
   • Built-in diagnostics: temperature, current, voltage supervision via fiber-optic link
   • Certified: SIL 3, CE, UL, FM, CSA
4. Application Areas
   • Medium-voltage motor drives (ACS6000, ACS580 MV) for pumps, compressors, mills
   • HVDC transmission converters and FACTS devices
   • Wind-turbine full-power converters and solar central inverters
   • Industrial rectifiers for electrolysis, smelting, traction substations
   • Marine and offshore power systems requiring compact, high-reliability switches