IXYS T2400GB45E

Description

• Continuous Collector Current Ic: 2400 A
• Maximum Pulse Collector Current ICM: 4800 A
• Saturation Voltage VCE(sat): 3.6 V
• Maximum Junction Temperature TJ: 125 °C
• Package Form: W45 capsule package
• Thermal Resistance (Junction to Heatsink): 0.0052 K/W

  Function Features

• Optimized balance between conduction loss and switching loss
• High short-circuit withstand capability
• Low thermal resistance for high power density design
• Internal gate circuit optimized for high voltage operation

  Application Scenarios: High voltage frequency converter, medium voltage drive, power transmission SVG, industrial DC chopper, heavy-duty traction power equipment

  Performance Parameters

• Turn-on Switching Energy: 14 J
• Turn-off Switching Energy: 13 J
• Maximum Operating Frequency: Up to 10 kHz

  Material Composition: Copper base plate, aluminium oxide ceramic insulating substrate, silicon IGBT chip, molybdenum buffer layers, hermetic metal capsule shell

  Structure Characteristics: Sealed cylindrical capsule package, two main power terminals and gate control terminal, flat contact surface for heatsink mounting

  Working Principle: Insulated gate bipolar transistor, control collector-emitter main current via gate drive voltage; used for high power DC-AC and DC-DC power switching conversion.

  Installation Requirements: Flat surface contact with liquid cooled or air-cooled heatsink; apply uniform thermal interface material; strictly comply with specified mounting torque.

  Usage Notes: Prevent overvoltage and overcurrent surge; match gate drive voltage and resistance parameters; strictly limit maximum junction temperature; avoid mechanical impact on capsule shell.