Infineon FZ1200R12KF1

Technical Specifications

1. Rated collector-emitter voltage Vces: 1200 V
2. Nominal DC collector current Ic: 1200 A at 80°C junction temperature
3. Repetitive peak collector current Icrm: 2400 A (1ms pulse width)
4. Built-in anti-parallel FWD diode rated current: 1200 A
5. Short-circuit withstand time: ≥10 μs under rated operating condition
6. Gate-emitter threshold voltage Vge(th): 5.8 V typical
7. Recommended gate drive voltage: +15 V turn-on / -15 V turn-off
8. Maximum junction temperature Tj max: 150°C
9. Storage temperature range: -40°C ~ +125°C
10. Package type: Standard 62mm high-power press-fit module housing
11. Mounting hole layout: 4 fixed bolt holes for flat water-cooled heat sink installation
12. Terminal type: Heavy-duty copper busbar power terminals + small signal gate control terminals

Function Features

• Integrated phase leg dual IGBT structure, simplifies three-phase inverter circuit design, reduces total module quantity and cabinet layout space
• Advanced Trench Field Stop IGBT chip technology, drastically lower switching loss and conduction loss compared with conventional planar IGBT
• Ultra-robust short-circuit protection characteristic, supports standard industrial hardware overcurrent protection design
• Low thermal resistance between chip and baseplate, compatible with water cooling and forced air cooling heat dissipation systems
• Bond wire optimization design enhances thermal cycling lifetime, suitable for frequent load fluctuation industrial equipment
• Low reverse recovery loss built-in freewheeling diodes, reduces circuit switching noise and electromagnetic interference
• Isolated aluminum oxide ceramic substrate between power chip and baseplate, high insulation voltage up to 2500 V AC
• Standard industry unified package size, interchangeable with same specification power modules of other mainstream brands
• Compliant with IEC 60747 power semiconductor safety standards, UL recognized component certification

Application Scenarios

Performance Parameters

1. Thermal resistance (junction to baseplate) Rth(jc): 0.015 K/W per single IGBT chip
2. Thermal resistance (baseplate to heat sink) Rth(ch): 0.008 K/W with standard thermal grease coating
3. Typical collector-emitter saturation voltage Vce(sat): 1.9 V at Ic=1200A, Tj=125°C
4. Turn-on switching energy Eon: 180 mJ at nominal test condition
5. Turn-off switching energy Eoff: 220 mJ at nominal test condition
6. Diode reverse recovery energy Err: 110 mJ
7. Insulation voltage between baseplate and power terminals: 2500 V AC for 1 minute
8. Thermal cycling lifetime: ≥10,000 cycles with ΔTj=80°C temperature swing
9. Gate input capacitance Cies: 180 nF typical value
10. Electrostatic discharge protection: Internal gate Zener diode to prevent static gate breakdown

Material Composition

1. Module outer plastic housing: High temperature resistant PPS flame retardant plastic, UL94 V-0 fire grade
2. Power chip substrate: Aluminum oxide Al₂O₃ ceramic direct copper bonded (DCB) substrate
3. Conductive circuit layer: Thick copper foil sintered on ceramic surface
4. IGBT & FWD bare chips: Silicon monocrystal semiconductor wafer with trench field stop structure
5. Internal connection material: Ultra-thick aluminum bonding wires for high current conduction
6. Baseplate: Oxygen-free copper thick plate with nickel anti-corrosion plating
7. Power terminals: Tinned thick copper busbars for low resistance high-current transmission
8. Internal filling insulation material: Silicone gel with high thermal stability and arc suppression performance
9. Gate signal terminals: Gold-plated phosphor bronze small pins for stable control signal connection

Structural Characteristics

Working Principle

Installation Requirements

1. Install module flat on smooth water-cooled heat sink surface; surface flatness tolerance of heat sink must be less than 0.02mm, no scratches or deformation.
2. Evenly coat 0.1–0.2mm thickness thermal conductive silicone grease between module baseplate and heat sink to eliminate air gap and reduce thermal resistance.
3. Tighten four mounting bolts with torque wrench following diagonal cross sequence, standard torque value 25 N·m, over-tightening cracks ceramic substrate, insufficient torque causes heat dissipation failure.
4. Power busbar connection torque for copper terminals: 30 N·m, use spring washer to prevent loose contact caused by thermal expansion and contraction.
5. Gate control signal wiring must adopt shielded twisted pair cable, shield layer single-point grounded on gate drive board side, cable length limited within 1 meter to suppress switching noise interference.
6. Cooling water for water cooling system requires deionized water with conductivity below 5μS/cm, inlet water temperature controlled between 25°C ~ 45°C, flow rate no less than 8 L/min per single module.
7. Reserve minimum 100mm distance between adjacent FZ1200R12KF1 modules inside power cabinet to avoid mutual heat accumulation.
8. Gate drive power supply must provide stable ±15V isolated power, independent from main high-voltage DC bus power supply.

Use & Maintenance Precautions

• Strictly forbid static touch gate signal pins without anti-static wristband; static electricity easily breaks thin gate oxide layer and permanently damages IGBT chips.
• Never operate the module without qualified heat sink installed; instant over-temperature will melt internal bonding wires and lead to module short-circuit failure.
• Do not exceed maximum junction temperature 150°C during continuous operation; long-term over-temperature sharply reduces service life of ceramic substrate and bonding wires.
• Check thermal conductive grease status every 12 months of continuous operation; replace aging dried grease to maintain heat dissipation efficiency.
• Inspect power busbar terminal torque every half year; thermal cycling will loosen bolts and cause contact overheating.
• Equip fast fuse and hardware short-circuit protection circuit on main DC bus; short-circuit duration exceeding 10μs will destroy IGBT chips.
• Avoid frequent overcurrent impact load operation, repeated heavy current surge accelerates bonding wire fatigue fracture.
• Store spare modules in sealed anti-static packaging under constant temperature dry environment, do not expose to humid air to prevent copper terminal oxidation.
• Do not cut open the plastic housing or remove internal silicone gel; housing damage will void manufacturer warranty and bring high voltage safety hazard.
• After power module failure replacement, test gate drive voltage waveform and short-circuit protection function before full-load operation of equipment.