LAM 810-069751-114

Description

• • RF Frequency: 13.56 MHz
  • Power: 1000 W
  • Voltage: 24 VDC, 48 VDC
  • Operating Temperature: 20 °C to 80 °C
• Functional Features:
  • Chamber Pressure Control: Closed-loop control with piezoelectric pressure sensors.
  • Gas Flow Regulation: Controls up to 6 mass flow controllers (MFCs).
  • RF Power Monitoring: Real-time monitoring of RF generator output.
  • Fault Detection: Detects arc faults, pressure deviations, and gas leaks.
• Performance Parameters:
  • Pressure Control Range: 1 mTorr to 10 Torr
  • MFC Control Accuracy: ±1% full scale
  • RF Power Stability: ±0.5%
• Material Composition:
  • PCB: High-temperature, chemical-resistant FR-4
  • Sensors: Piezoresistive pressure sensors, thermal MFC sensors
  • Components: High-voltage, high-frequency rated ICs
• Structural Characteristics:
  • Form Factor: 4U rack-mountable board
  • Connectors: Chamber I/O, RF interface, MFC ports
  • Coating: Conformal coating for chemical resistance
• Working Principle: Receives process recipes from the main system, adjusts chamber pressure, gas flows, and RF power to maintain optimal etching conditions; monitors process parameters for quality control.
• Advantages:
  • Process Precision: Ensures uniform etching across 300 mm wafers.
  • Chemical Resistance: Conformal coating withstands corrosive process gases.
  • High Integration: Combines multiple process control functions on one board.
• Applicable Industries: Semiconductor manufacturing (plasma etching), microelectronics fabrication.
• Model Series: 810 Series (Lam Research Etch Process Control Series)
• Installation Requirements:
  • Mount in the etcher’s process control cabinet.
  • Connect to chamber sensors, MFCs, and RF generator.
• Usage Notes:
  • Handle only with ESD-protected gloves.
  • Regularly inspect conformal coating for damage.